| Specification | SNV3410-800G |
|---|---|
| Capacity | 800 GB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 3 x4, NVMe 1.3 |
| NAND Flash Type | 3D NAND (TLC) |
| Performance | Sequential Read: 3,450 MB/s |
| Sequential Write: 2,000 MB/s | |
| Random Read (4KB, QD32): 500,000 IOPS | |
| Random Write (4KB, QD32): 220,000 IOPS | |
| Endurance | 3,200 TBW (Terabytes Written) |
| MTBF (Mean Time Between Failures) | 2,000,000 hours |
| Power Loss Protection | Yes (Data retention during unexpected power loss) |
| Operating Temperature | 0°C to 70°C (32°F to 158°F) |
| Storage Temperature | -40°C to 85°C (-40°F to 185°F) |
| Power Consumption | Active: 8.3 W |
| Idle: 3.2 W | |
| Warranty | 5 Years (Limited) |
| Features | - Low latency, high throughput |
| - NVMe 1.3 support | |
| - Power loss protection | |
| - S.M.A.R.T. support | |
| - Advanced wear leveling | |
| - Thermal throttling for reliability |
| Specification | SNV3410-800G |
|---|---|
| Capacity | 800 GB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 3 x4, NVMe 1.3 |
| NAND Flash Type | 3D NAND (TLC) |
| Performance | Sequential Read: 3,450 MB/s |
| Sequential Write: 2,000 MB/s | |
| Random Read (4KB, QD32): 500,000 IOPS | |
| Random Write (4KB, QD32): 220,000 IOPS | |
| Endurance | 3,200 TBW (Terabytes Written) |
| MTBF (Mean Time Between Failures) | 2,000,000 hours |
| Power Loss Protection | Yes (Data retention during unexpected power loss) |
| Operating Temperature | 0°C to 70°C (32°F to 158°F) |
| Storage Temperature | -40°C to 85°C (-40°F to 185°F) |
| Power Consumption | Active: 8.3 W |
| Idle: 3.2 W | |
| Warranty | 5 Years (Limited) |
| Features | - Low latency, high throughput |
| - NVMe 1.3 support | |
| - Power loss protection | |
| - S.M.A.R.T. support | |
| - Advanced wear leveling | |
| - Thermal throttling for reliability |